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| POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. IRF6N60 FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET Page 1 POWER MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by TJ(max) and thermal response TJ = 25 EAS JC JA IRF6N60 Symbol ID IDM VGS VGSM PD Value 6.0 18 20 40 125 45 Unit A V V W Continue Non-repetitive TJ, TSTG -55 to 150 mJ 180 1.0 62.5 260 /W (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25 ) TL ORDERING INFORMATION Part Number ....................IRF6N60FP Package TO-220 Full Pak IRF6N60...............................................TO-220 TEST CIRCUIT Test Circuit - Avalanche Capability Page 2 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . IRF6N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * Forward Transconductance (VDS = 15 V, ID = 3.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 9.1 ) * (VDS = 300 V, ID = 6.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 100 50 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 3.4 1498 158 29 14 19 40 26 35.5 8.1 14.1 4.5 7.5 2100 220 60 30 40 80 55 50 2.0 100 100 4.0 1.2 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 600 Typ Max Units V A IRF6N60 Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 6.0 A, dIS/dt = 100A/s) VSD ton trr 0.83 ** 266 1.2 V ns ns * Pulse Test: Pulse Width 300s, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 3 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS IRF6N60 Page 4 IRF6N60 POWER MOSFET PACKAGE DIMENSION TO-220 D A F E c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 b b1 c c1 D E E1 e e1 F L L1 L1 L e b1 e1 Front View b A1 c Side View TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View Page 5 |
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